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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
O2/GaAs
oxygen/gallium arsenide
arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Jimenez I., Moreno M., Martin-Gago J.A., Asensio M.C., Sacedon J.L.
J. Vac. Sci. Technol. A 12, 1170
Pub Year:
1994

Data Processing:
Chemical Shift
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
126.10
Overall Energy Resolution (eV):
0.35
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
~1E4 L O2/n and p-type GaAs(111)-(1x1) with carrier concentrations of 3E18 cm-3 and 1.7E18 cm-3, respectively. The thickness of the native oxide was 9 A. Branching ratio = 0.66. The chemical shift is relative to the pure GaAs.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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