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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
one rest atom in the second layer without a bond to trimer
indium(III) arsenide
arsenide, II-VI semiconductor, III-V semiconductor

Citation:
Andersson C.B.M., Karlsson U.O., Hakansson M.C., Olsson L.O., Ilver L., Kanski J., et al.
Surf. Sci. 347, 199
Pub Year:
1996

Data Processing:
Surface Core-level Shift for the Second Layer of Atoms
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
80-155
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type S-doped InAs(-1-1-1)-(2x2) with a carrier concentration of 8.7E16 cm-3. Peak locations: Voigt function. The spectra were recorded at normal emission, 35 and 70 degrees.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300

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