NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

SiC

SiC*

silicon carbide

409-21-2

carbide, II-VI semiconductor, IV semiconductor, IV-VI semiconductor, silicide

Citation:

Author Name(s):

Muehlhoff L., Choyke W.J., Bozack M.J., Yates J.T., Jr.

Journal:

J. Appl. Phys. 60, 2842

DOI:

Pub Year:

1986

bookAll Records in this Publication

Data Processing:

Photoelectron Line

283.80

0.2

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Gold

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

Single crystal. SiC(000-1) and SiC(0001).

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300