NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

As/Si

silicon asymmetry dimers

arsenic/silicon

CAS Registry No:

7440-38-2

arsenic, element, IV-VI semiconductor

Author Name(s):

Rochet F., Poncey C., Dufour G., Roulet H., Rodrigues W.N., Sauvage M., et al

Surf. Sci. 326, 229

Pub Year:

1995

book All Records in this Publication

Chemical Shift

Line Designation:

CS-2p_3/2

Chemical Shift (eV):

1.00

Energy Uncertainty:

Background Subtraction Method:

Shirley

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.53

Lorentzian Width (eV):

0.1

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

145

Overall Energy Resolution (eV):

0.30

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

B-doped Si(001)-(2x1) with a resistivity between 0.076 and 0.1ohm cm was exposed to an As4 flux at 773 K under a pressure of about 1E-6 Torr. LEED pattern was also (2x1). The relative intensity was 0.032.

crystal, heated and cooled, molecular beam epitaxy, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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