NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

H₂O/Si

silicon atoms attached to OH

silicon

CAS Registry No:

7440-21-3

element, hydride, IV-VI semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Scholz S.M., Jacobi K.

Surf. Sci. 369, 117

Pub Year:

1996

book All Records in this Publication

Chemical Shift

Line Designation:

CS-2p_3/2

Chemical Shift (eV):

0.90

Energy Uncertainty:

Background Subtraction Method:

Linear

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.610

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

135

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

2 L H2O/Si(113)-(3x1). FAT mode. The spectra were recorded at normal emission and 40 degrees. Branching ratio = 0.52. The relative intensity was 0.12.

oxidizing atmosphere, wafer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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