NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 5

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

Sn/Si

INT-2p_3/2

0.55

Sn/Si

INT-2p_3/2

-0.42

Sn/Si

INT-2p_3/2

-0.49

SS1-2p_3/2

0.39

SS2-2p_3/2

-0.69

Data Type:

Interface Core-Level Shift

Line Designation:

INT-2p_3/2

Interface Core-Level Shift:

-0.49

Energy Uncertainty:

0.05

Background Subtraction Method:

Shirley

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

0.115

Use of X-ray Monochromator:

Anode Material:

other source

X-ray Energy:

110, 150

Overall Energy Resolution (eV):

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Si(111)-(R3xR3)R30 degrees-Sn. The n-type P-doped Si(111) substrate with a carrier concentration of ~1E15 cm-3 was washed in acetone and annealed (T = ~ 1373 K, time = 30 s). Peak locations: Voigt function. Branching ratio = 0.5.