NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

Pd/SiOx/Si

Pd/Si*Ox/Si

palladium on silicon oxides/silicon

CAS Registry No:

7440-05-3

anhydride, element, IV-VI semiconductor, non-stoichiometric oxide

Author Name(s):

Schleich B., Schmeisser D., Gopel W.

Surf. Sci. 191, 357

Pub Year:

1987

book All Records in this Publication

Photoelectron Line

Line Designation:

2p_3/2

Binding Energy (eV):

102.20

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Other, Si2p = 99.34

Charge Reference:

Element

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

3.2 nm Pd/SiOx/Si(111). Si(111) (p-type, boron doped with 6 Ohm cm resistivity) crystals covered with native oxide (thickness, d=2nm) and Pd. Coverages were monitored by a quartz crystall oscillator.

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