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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Ga
Formula:
GaP
Name:
gallium phosphide
CAS Registry No:
12063-98-8
Class:
chalcogenide, II-VI semiconductor, III-V semiconductor, phosphide
Author Name(s):
Nishitani R., Iwasaki H., Mizokawa Y., Nakamura S.
Journal:
Jpn. J. Appl. Phys. 17, 321
DOI:
10.1143/JJAP.17.321
Pub Year:
1978
book
All Records in this Publication
Data Type:
Auger Parameter
Line Designation:
AP-3d, L
3
M
45
M
45
(
1
G)
Auger Parameter (eV):
1084.90
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Energy Scale Evaluation:
Reliable
Comment:
Specimen:
chemically etched
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
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