NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

Element:

Formula:

O₂/Al₀.₃Ga₀.₇As

XPS Formula:

AlOx

Name:

oxygen/aluminum gallium arsenide (O2/Al0.3Ga0.7As)

CAS Registry No:

Class:

III-V semiconductor, non-stoichiometric oxide

Author Name(s):

Hofmann A., Streubel P., Meisel A.

Journal:

Vacuum 41, 1728

DOI:

Pub Year:

1990

book All Records in this Publication

Photoelectron Line

74.90

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Anode Material:

other anode

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

1.0E6-1.0E9 L O2/AlGaAs.

Specimen:

adsorbed, oxidizing atmosphere, oxygen pressure, reacted

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300