NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

Si

SiO₂/Si

Si ₀ state.

silicon dioxide/silicon

CAS Registry No:

7631-86-9

element, IV semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Himpsel F.J., McFeely F.R., Taleb-Ibrahimi A., Yarmoff J.A., Hollinger G.

Phys. Rev. B 38, 6084

Pub Year:

1988

book All Records in this Publication

Doublet Separation for Photoelectron Lines

Line Designation:

DS-2p

Double Separation (eV):

0.61

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

130

Overall Energy Resolution (eV):

Calibration:

Other, Si2p = 99.34

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

10-30 A SiO2/Si. The films were obtained by oxidizing atomically clean Si surfaces in pure O2. Thickness of the films was determined by ellipsometry and checked with transmission electron microscopy.

oxidizing atmosphere, oxygen pressure, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

An error has occurred. This application may no longer respond until reloaded. Reload 🗙