NIST X-ray Photoelectron Spectroscopy Database

One Page Summary

Instruction: Click on selected Tab for more information.

Cs/GaAs

cesium/gallium arsenide

7440-46-2

element

Interface Core-Level Shift

INT-4d_5/2

-0.78

other

mixed Gaussian/Lorentzian

0.7

0.3

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

0.01 ML Cs/GaAs(100), cleaved surface. Branching ratio is 1.4.

adsorbed, cleaved crystal, reacted film, surface coverage from 0ML to 1ML (0ML < coverage < 1ML), thin layer

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

293