NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

SiCl₄/Si

Si*Cl/Si

chlorosilane on silicon

CAS Registry No:

10026-04-7

chloride, element, IV-VI semiconductor, silane

Author Name(s):

Whitman L.J., Joyce S.A., Yarmoff J.A., McFeely F.R., Terminello L.J.

Surf. Sci. 232, 297

Pub Year:

1990

book All Records in this Publication

Chemical Shift

Line Designation:

CS-2p_3/2

Chemical Shift (eV):

0.92

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

130

Overall Energy Resolution (eV):

0.1

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Silicon was heated in vac. to 1323K to remove the native oxide layer and then cooling slowly to 300K. 0.35 ML (or 1E4 L) SiCl4/Si(111)-(7x7), n-doped with 1 Ohm cm resistivity. The energy is referenced to the bulk state of the Si2p line

adsorbed, native oxide, surface coverage from 0ML to 1ML (0ML < coverage < 1ML), thin layer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

293

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