NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Hf

HfN₀.₁₉

Hf*N₀.₁₉

hafnium nitride (HfN0.19)

CAS Registry No:

nitride

Author Name(s):

Baba Y., Sasaki T.A., Takano I.

J. Vac. Sci. Technol. A 6, 2945

Pub Year:

1988

book All Records in this Publication

Photoelectron Line

Line Designation:

4f_7/2

Binding Energy (eV):

15.30

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The nitrogenation was carried out by bombarding the metal with 8-keV Ar+ ions in nitrogen at 1.0E-3 Pa. The approximate thickness of the TiN films obtained under these conditions was ~7 nm which is complete with to the range of the Ar+ions.

implanted, semiconductor

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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