germanium/silicon(CasNo:7440-21-3)
element, IV-VI semiconductor
Miller T., Hsieh T.C., Chiang T.-C.
Anode Material:
other source
Overall Energy Resolution (eV):
0.4
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
6 ML Ge/n-type Si(111)-(7x7). The thickness was determined by quartz-crystal thickness monitor. Branching ratio of the bulk and surface comp. are 0.509 and 0.529, respectively. Surface core-level shift derived from analysis of spectra for photon energies of 108 eV and 130 eV.
crystal, semiconductor, thin layer, vapor deposited
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
High-energy Electron Diffraction
Specimen Temperature (K):
300
