NIST X-ray Photoelectron Spectroscopy Database

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TaSi₂

Ta*Si₂

tantalum disilicide

12039-79-1

IV-VI semiconductor, silicide

Photoelectron Line

4f_7/2

22.30

0.2

data

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Cu=84.00,932.67, Pd3d5=335.12

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with three-point correction of energy scale

Comment:

Tantalum silicide was deposited on polysilicon on silicon-on-sapphire wafers by cosputtering from a tantalum rich target to a thickness of 200 nm.