NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

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Element:

Formula:

SiN₀.₈₂

XPS Formula:

SiN*₀.₈₂

Name:

silicon nitride (SiN0.82)

CAS Registry No:

Class:

IV-VI semiconductor, nitride

Author Name(s):

Ingo G.M., Zacchetti N.

Journal:

High Temperature Science 28, 137

Pub Year:

1990

book All Records in this Publication

Photoelectron Line

397.80

Background Subtraction Method:

other

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

1.15

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Cu = 84.00,932.67

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with two-point correction of energy scale

Comment:

The amorphous SiNx alloys are obtained by means of the Dual Beam Sputtering technique.

Specimen:

amorphous, sputter deposited, thick film

Method of Determining Specimen Composition:

Electron-Probe Microanalysis, X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300