Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
1E0-1E9 L O2/Te-doped Al0.6Ga0.4As. The AlGaAs was cleaned by chemical etching in an ammonia solution and by cycles of Ar+ ion bombardment (Ep = 400 eV, Ip = 4 microamperes, time = 30 min) and annealing (T = 670 K, time = 30 min).
oxidizing atmosphere, oxygen pressure, semiconductor, solid sample mounted on tape
Method of Determining Specimen Composition:
Electron-Probe Microanalysis, X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
