NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

Si/GaAsOx/GaAs

Si(III) state

silicon/gallium arsenide oxides/gallium arsenide

CAS Registry No:

arsenic, arsenide, element, III-V semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Jimenez I., Palomares F.J., Sacedon J.L.

Phys. Rev. B 49, 11117

Pub Year:

1994

book All Records in this Publication

Chemical Shift

Line Designation:

CS-2p

Chemical Shift (eV):

2.50

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

1.15

Lorentzian Width (eV):

0.12

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

126.10

Overall Energy Resolution (eV):

0.35

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

4 A Si/~ 8 A GaAsOx/GaAs(110)-(1x1). Electron-stimulated oxidation (Ep = 150 eV) of Na-doped (n = 1.7E18 cm-3) As-capped p-GaAs(110)-(1x1). The energy is referenced to the Si(0) state of the Si2p line. Branching ratio = 0.50. The Gaussian FWHM of the Si(0) state was 0.7 eV.

multilayer structure, semiconductor, vapor deposited

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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