NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

N

HN₃/Si

H^-N=N=&N*/Si

hydrogen azide/silicon

CAS Registry No:

7782-79-8

azide

Author Name(s):

Chu J.C.S., Bu Y., Lin M.C.

Surf. Sci. 284, 281

Pub Year:

1993

book All Records in this Publication

Photoelectron Line

Line Designation:

1s

Binding Energy (eV):

399.50

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

Gaussian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Si2p = 99.34

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

2.0 +- 0.5 L HN3/B-doped Si(111)-(7x7) with a resistivity of 10 ohm cm. The substrate was annealed at temperature more than 1500 K. The curve fitting was based on equal FWHMs and intensities of the nitrogen states (H-N*=N=&N and H-N=N=&N*).

adsorbed, cooled, thin layer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

120

An error has occurred. This application may no longer respond until reloaded. Reload 🗙