NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

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Element:

Formula:

Y₂O₃/SiO₂/Si

Name:

diyttrium trioxide/silicon dioxide/silicon

CAS Registry No:

Class:

double oxide, element, non-stoichiometric oxide, oxide

Author Name(s):

Behner H., Wecker J., Matthee T., Samwer K.

Journal:

Surf. Interface Anal. 18, 685

DOI:

Pub Year:

1992

book All Records in this Publication

Photoelectron Line

3d_5/2

158.00

Background Subtraction Method:

Linear

Peak Location Method:

Gaussian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

0.9

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

10 A of yttria were deposited onto 17 A SiO2/Si(100) at 1003 K. The thickness was measured using a quartz-crystal thickness monitor.

Specimen:

crystal, multilayer structure, oxygen pressure, thin layer, vapor deposited

Method of Determining Specimen Composition:

Rutherford Backscattering Spectrometry

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction, Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300