NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ta

Ta₂O₅/Ta₂N

Ta*₂O₅/Ta₂N

ditantalum pentoxide/ditantalum nitride

CAS Registry No:

1314-61-0

nitride, oxide

Author Name(s):

Prieto P., Galan L., Sanz J.M.

Appl. Surf. Sci. 70, 186

Pub Year:

1993

book All Records in this Publication

Photoelectron Line

Line Designation:

4f_7/2

Binding Energy (eV):

27.05

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

1.35

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

22 A Ta2O5/3000 A Ta2N/glass. The oxide film was prepared by oxidation of Ta2N in atmospheric air (40 % humidity, T = 300 K, time = 3min). Ta2N thin film was grown by reactive sputtering in a nitrogen atmosphere.

oxidizing atmosphere, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300

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