Detail summary:
General Citation Data Processing Measurement Information Specimen Information Comment

General:
Element: O
Formula: SiO2
XPS Formula:
Name: silicon(IV) dioxide
CAS Registry No: 7631-86-9
Classes: anhydride, IV-VI semiconductor, oxide
Citation:
Author Name(s): Kibel M.H., Leech P.W.
Journal: Surf. Interface Anal. 24, 605 (1996)
Data Processing:
Data Type: Photoelectron Line
Line Designation: 1s
Quality of Data: Adequate
Binding Energy (eV) 533.2
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method: data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Measurement Information:
Use of X-ray Monochromator: No
Excitation Energy: Al
X-ray Energy:
Overal Energy Resolution (eV):
Calibration:
Charge Reference: Adventitious carbon
Energy Scale Evalution: Reliable (reported energy within 300 eV of a reference energy)
Specimen Information:
Specimen: insulator, sputtered
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K): 300
Sample Quality: Good
Comment:
Notes: The sample was cleaned by Ar+ ion bombardment (Ep = 5 keV, j =~ 2 microamperes c

General Citation Data Processing Measurement Information Specimen Information Comment

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