Detail summary:
General Citation Data Processing Measurement Information Specimen Information Comment

General:
Element: O
Formula: SiO2
XPS Formula:
Name: silicon(IV) dioxide
CAS Registry No: 7631-86-9
Classes: anhydride, IV-VI semiconductor, oxide
Citation:
Author Name(s): Dang T.A., Chau C.N.
Journal: J. Electrochem. Soc. 143, 302 (1996)
Data Processing:
Data Type: Photoelectron Line
Line Designation: 1s
Quality of Data: Adequate
Binding Energy (eV) 532.5
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method: data
Full Width at Half-maximum Intensity (eV): 2.6
Gaussian Width (eV):
Lorentzian Width (eV):
Measurement Information:
Use of X-ray Monochromator: No
Excitation Energy: Al
X-ray Energy:
Overal Energy Resolution (eV):
Calibration:
Charge Reference: Adventitious carbon
Energy Scale Evalution: Reliable, with one-point correction of energy scale
Specimen Information:
Specimen: insulator, solid sample mounted on tape
Method of Determining Specimen Composition: X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K): 300
Sample Quality: Good
Comment:
Notes:

General Citation Data Processing Measurement Information Specimen Information Comment

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