Detail summary:
General Citation Data Processing Measurement Information Specimen Information Comment

General:
Element: Si
Formula: SiO2
XPS Formula:
Name: silicon(IV) dioxide
CAS Registry No: 7631-86-9
Classes: anhydride, IV-VI semiconductor, oxide
Citation:
Author Name(s): Alexander M. R., Short R. D., Jones F. R., Stollenwerk M., Zabold J., and Michaeli, W.
Journal: J. Mat. Sci. 31, 1879 (1996)
Data Processing:
Data Type: Photoelectron Line
Line Designation: 2p
Quality of Data: Adequate
Binding Energy (eV) 103.2
Energy Uncertainty: 0.19
Background Subtraction Method: Linear
Peak Location Method: data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Measurement Information:
Use of X-ray Monochromator: No
Excitation Energy: Mg
X-ray Energy:
Overal Energy Resolution (eV):
Calibration: Au4f7 = 84.00
Charge Reference: Adventitious carbon
Energy Scale Evalution: Reliable, with one-point correction of energy scale
Specimen Information:
Specimen: crystal, insulator, thick film
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K): 300
Sample Quality: Adequate
Comment:
Notes: Quartz. FAT mode. Emission angle = 55 degrees.

General Citation Data Processing Measurement Information Specimen Information Comment

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