| General:
|
| Element:
|
Si
|
| Formula:
|
SiO2
|
| XPS Formula:
|
|
| Name:
|
silicon(IV) dioxide
|
| CAS Registry No:
|
7631-86-9
|
| Classes:
|
anhydride, IV-VI semiconductor, oxide
|
| Citation:
|
| Author Name(s):
|
Alexander M. R., Short R. D., Jones F. R., Stollenwerk M., Zabold J., and Michaeli, W.
|
| Journal:
|
J. Mat. Sci. 31, 1879 (1996)
|
| Data Processing:
|
| Data Type:
|
Photoelectron Line
|
| Line Designation:
|
2p
|
| Quality of Data:
|
Adequate
|
|
Binding Energy (eV)
|
103.2
|
| Energy Uncertainty:
|
0.19
|
| Background Subtraction Method:
|
Linear
|
| Peak Location Method:
|
data
|
| Full Width at Half-maximum Intensity (eV):
|
|
| Gaussian Width (eV):
|
|
| Lorentzian Width (eV):
|
|
| Measurement Information:
|
| Use of X-ray Monochromator:
|
No
|
| Excitation Energy:
|
Mg
|
| X-ray Energy:
|
|
| Overal Energy Resolution (eV):
|
|
| Calibration:
|
Au4f7 = 84.00
|
| Charge Reference:
|
Adventitious carbon
|
| Energy Scale Evalution:
|
Reliable, with one-point correction of energy scale
|
| Specimen Information:
|
| Specimen:
|
crystal, insulator, thick film
|
| Method of Determining Specimen Composition:
|
|
| Method of Determining Specimen Crystallinity:
|
|
| Specimen Temperature (K):
|
300
|
| Sample Quality:
|
Adequate
|
| :
|
| Notes:
|
Quartz. FAT mode. Emission angle = 55 degrees.
|