General:
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Element:
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Si
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Formula:
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SiO2
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XPS Formula:
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Name:
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silicon(IV) dioxide
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CAS Registry No:
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7631-86-9
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Classes:
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anhydride, IV-VI semiconductor, oxide
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Citation:
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Author Name(s):
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Alexander M. R., Short R. D., Jones F. R., Stollenwerk M., Zabold J., and Michaeli, W.
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Journal:
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J. Mat. Sci. 31, 1879 (1996)
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Data Processing:
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Data Type:
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Photoelectron Line
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Line Designation:
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2p
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Quality of Data:
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Adequate
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Binding Energy (eV)
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103.2
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Energy Uncertainty:
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0.19
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Background Subtraction Method:
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Linear
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Peak Location Method:
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data
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Full Width at Half-maximum Intensity (eV):
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Gaussian Width (eV):
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Lorentzian Width (eV):
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Measurement Information:
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Use of X-ray Monochromator:
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No
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Excitation Energy:
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Mg
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X-ray Energy:
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Overal Energy Resolution (eV):
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Calibration:
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Au4f7 = 84.00
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Charge Reference:
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Adventitious carbon
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Energy Scale Evalution:
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Reliable, with one-point correction of energy scale
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Specimen Information:
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Specimen:
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crystal, insulator, thick film
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Method of Determining Specimen Composition:
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Method of Determining Specimen Crystallinity:
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Specimen Temperature (K):
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300
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Sample Quality:
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Adequate
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:
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Notes:
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Quartz. FAT mode. Emission angle = 55 degrees.
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