Detail summary:
General Citation Data Processing Measurement Information Specimen Information Comment

General:
Element: Ga
Formula: GaSb
XPS Formula: Ga*Sb
Name: gallium stibnide
CAS Registry No: 12064-03-8
Classes: III-V semiconductor, stibnide
Citation:
Author Name(s): Gualtieri G.J., Schwartz G.P., Nuzzo R.G., Sunder W.A.
Journal: Appl. Phys. Lett. 49, 1037 (1986)
Data Processing:
Data Type: Photoelectron Line
Line Designation: 3d5/2
Quality of Data: Adequate
Binding Energy (eV) 18.92
Energy Uncertainty: 0.025
Background Subtraction Method: Linear
Peak Location Method: Gaussian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Measurement Information:
Use of X-ray Monochromator: No
Excitation Energy: Mg
X-ray Energy:
Overal Energy Resolution (eV):
Calibration: Au4f7 = 84.00
Charge Reference: Valence band minimum
Energy Scale Evalution: Reliable (reported energy within 300 eV of a reference energy)
Specimen Information:
Specimen: molecular beam epitaxy
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K): 300
Sample Quality: Adequate
Comment:
Notes: The sample was grown at a substrate temperature of 763 K

General Citation Data Processing Measurement Information Specimen Information Comment

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