Detail summary:
General Citation Data Processing Measurement Information Specimen Information Comment

General:
Element: Sb
Formula: GaSb
XPS Formula: GaSb*
Name: gallium stibnide
CAS Registry No: 12064-03-8
Classes: III-V semiconductor, stibnide
Citation:
Author Name(s): Franklin G.E., Rich D.H., Samsavar A., Hirchchorn E.S., Leibsle F.M.,Miller T., et al.
Journal: Phys. Rev. B 41, 12619 (1990)
Data Processing:
Data Type: Doublet Separation for Photoelectron Lines
Line Designation: DS-4d
Quality of Data: Adequate
>Separation Energy (eV) 1.25
Energy Uncertainty: 0.01
Background Subtraction Method:
Peak Location Method: mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV): 1.0575
Lorentzian Width (eV): 0.24
Measurement Information:
Use of X-ray Monochromator: Yes
Excitation Energy:
X-ray Energy:
Overal Energy Resolution (eV): 0.2
Calibration: FL
Charge Reference: Conductor
Energy Scale Evalution: Reliable (reported energy within 300 eV of a reference energy)
Specimen Information:
Specimen: crystal, molecular beam epitaxy, semiconductor, sputtered and heated, thin film
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity: High-energy Electron Diffraction
Specimen Temperature (K): 300
Sample Quality: Good
Comment:
Notes: n-type, Te-doped with a carrier density of 1.5E17 cm-3 GaSb(100)-(1x3) samples. Au foil in electrical contact with the sample was used for calibration. The samples were aligned by Laue diffraction to within 0.5 degree.

General Citation Data Processing Measurement Information Specimen Information Comment

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