Detail summary:
General Citation Data Processing Measurement Information Specimen Information Comment

General:
Element: Ga
Formula: GaSb
XPS Formula:
Name: gallium stibnide
CAS Registry No: 12064-03-8
Classes: III-V semiconductor, stibnide
Citation:
Author Name(s): Olde J., Behrens K.M., Barnscheidt H.-P., Manzke R., Skibowski M.
Journal: Phys. Rev. B 44, 6312 (1991)
Data Processing:
Data Type: Photoelectron Line
Line Designation: 3d5/2
Quality of Data: Good
Binding Energy (eV) 18.87
Energy Uncertainty: 0.1
Background Subtraction Method:
Peak Location Method: data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Measurement Information:
Use of X-ray Monochromator: Yes
Excitation Energy: other source
X-ray Energy: 34
Overal Energy Resolution (eV):
Calibration:
Charge Reference: Valence band minimum
Energy Scale Evalution: Reliable (reported energy within 300 eV of a reference energy)
Specimen Information:
Specimen: crystal, sputtered and heated
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity: LEED/RHEED
Specimen Temperature (K): 300
Sample Quality: Good
Comment:
Notes: p-type doped GaSb(001)-(2x3). The sample was cleaned by Ar+ ion bombardment (Ep = 800 eV, time = 3 h) and subsequently annealed (T = 763 K , time = 15 min). The spectra were recorded at normal emission.

General Citation Data Processing Measurement Information Specimen Information Comment

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