Detail summary:
General Citation Data Processing Measurement Information Specimen Information Comment

General:
Element: O
Formula: SiO2
XPS Formula:
Name: silicon dioxide
CAS Registry No: 7631-86-9
Classes: catalyst, glass, IV semiconductor, mineral, oxide
Citation:
Author Name(s): Paparazzo E., Fanfoni M., Severini E.
Journal: Appl. Surf. Sci. 56, 866 (1992)
Data Processing:
Data Type: Photoelectron Line
Line Designation: 1s
Quality of Data: Adequate
Binding Energy (eV) 533.3
Energy Uncertainty: 0.1
Background Subtraction Method:
Peak Location Method: data
Full Width at Half-maximum Intensity (eV): 1.6
Gaussian Width (eV):
Lorentzian Width (eV):
Measurement Information:
Use of X-ray Monochromator: No
Excitation Energy: Al
X-ray Energy:
Overal Energy Resolution (eV):
Calibration:
Charge Reference: Adventitious carbon
Energy Scale Evalution: Reliable, with one-point correction of energy scale
Specimen Information:
Specimen: oxygen pressure, semiconductor, thin film, thermal oxide
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K): 300
Sample Quality: Adequate
Comment:
Notes: 1500 A SiO2 was grown at 1373 K in dry O2 atmosphere on a high-quality Si(100) single crystal. The O/Si intensity ratio determined by XPS was 2.11.

General Citation Data Processing Measurement Information Specimen Information Comment

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