Detail summary:
General Citation Data Processing Measurement Information Specimen Information Comment

General:
Element: O
Formula: SiO2
XPS Formula:
Name: silicon dioxide
CAS Registry No: 7631-86-9
Classes: catalyst, glass, IV semiconductor, mineral, oxide
Citation:
Author Name(s): Hagio T., Takase A., Umebayashi S.
Journal: J. Mater. Sci. Lett. 11, 878 (1992)
Data Processing:
Data Type: Photoelectron Line
Line Designation: 1s
Quality of Data: Adequate
Binding Energy (eV) 532.5
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method: data
Full Width at Half-maximum Intensity (eV): 2.5
Gaussian Width (eV):
Lorentzian Width (eV):
Measurement Information:
Use of X-ray Monochromator: No
Excitation Energy: Mg
X-ray Energy:
Overal Energy Resolution (eV):
Calibration:
Charge Reference: Argon
Energy Scale Evalution: Reliable, with one-point correction of energy scale
Specimen Information:
Specimen: solid sample mounted on tape, sputtered in argon
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K): 300
Sample Quality: Adequate
Comment:
Notes: The sample was cleaned by Ar+ ion bombardment (Ep = 400 eV, time = 200 s). No Ar+ ion-induced damage to the sample was detected.

General Citation Data Processing Measurement Information Specimen Information Comment

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