Detail summary:
General Citation Data Processing Measurement Information Specimen Information Comment
General:
Element: Se
Formula: Bi10Ge20Se70
XPS Formula:
Name: bismuth germanium selenium alloy (10-20-70)
CAS Registry No:
Classes: alloy, chalcogenide, IV-VI semiconductor, thin film
Citation:
Author Name(s): Kumar S., Kashyap S.C., Chopra K.L.
Journal: J. Appl. Phys. 72, 2066 (1992)
Data Processing:
Data Type: Photoelectron Line
Line Designation: 3d
Quality of Data: Adequate
Binding Energy (eV) 54.6
Energy Uncertainty: 0.2
Background Subtraction Method:
Peak Location Method: data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Measurement Information:
Use of X-ray Monochromator: No
Excitation Energy: Mg
X-ray Energy:
Overal Energy Resolution (eV):
Calibration: Au4f7 = 84.00
Charge Reference: Conductor
Energy Scale Evalution: Reliable, with one-point correction of energy scale
Specimen Information:
Specimen: amorphous, thin film, vapor deposited
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity: XRD/TEM
Specimen Temperature (K): 300
Sample Quality: Adequate
Comment:
Notes: n-type Bi10Ge20Se70. Bi content was determined by AES and atomic absorption spectrophotometry. FAT mode.
General Citation Data Processing Measurement Information Specimen Information Comment
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