Detail summary:
General Citation Data Processing Measurement Information Specimen Information Comment

General:
Element: Ga
Formula: GaSb
XPS Formula:
Name: gallium stibnide
CAS Registry No: 12064-03-8
Classes: III-V semiconductor, stibnide
Citation:
Author Name(s): Yu E.T., Phillips M.C., Chow D.H., Collins D.A., Wang M.W., McCaldin J.O., et al.
Journal: Phys. Rev. B 46, 13379 (1992)
Data Processing:
Data Type: Photoelectron Line
Line Designation: 3d
Quality of Data: Good
Binding Energy (eV) 18.86
Energy Uncertainty: 0.04
Background Subtraction Method: other
Peak Location Method: mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Measurement Information:
Use of X-ray Monochromator: Yes
Excitation Energy: Al
X-ray Energy:
Overal Energy Resolution (eV):
Calibration:
Charge Reference: Valence band minimum
Energy Scale Evalution: Reliable (reported energy within 300 eV of a reference energy)
Specimen Information:
Specimen: molecular beam epitaxy, semiconductor, thin film
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity: Reflection High-Energy Electron Diffraction
Specimen Temperature (K): 300
Sample Quality: Good
Comment:
Notes: 5000 A GaSb/p-type GaSb(100) with a carrier concentration of 1E17 cm-3. Peak locations: Voigt function.

General Citation Data Processing Measurement Information Specimen Information Comment

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