| General:
|
| Element:
|
Ga
|
| Formula:
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GaSe
|
| XPS Formula:
|
|
| Name:
|
gallium selenide
|
| CAS Registry No:
|
12024-11-2
|
| Classes:
|
chalcogenide, II-VI semiconductor, selenide
|
| Citation:
|
| Author Name(s):
|
Lang O., Tomm Y., Schlaf R., Pettenkofer C., Jaegermann W.
|
| Journal:
|
J. Appl. Phys. 75, 7814 (1994)
|
| Data Processing:
|
| Data Type:
|
Photoelectron Line
|
| Line Designation:
|
3d
|
| Quality of Data:
|
Adequate
|
|
Binding Energy (eV)
|
19.0
|
| Energy Uncertainty:
|
|
| Background Subtraction Method:
|
|
| Peak Location Method:
|
data
|
| Full Width at Half-maximum Intensity (eV):
|
|
| Gaussian Width (eV):
|
|
| Lorentzian Width (eV):
|
|
| Measurement Information:
|
| Use of X-ray Monochromator:
|
No
|
| Excitation Energy:
|
Mg
|
| X-ray Energy:
|
|
| Overal Energy Resolution (eV):
|
|
| Calibration:
|
Au,Cu = 84.00,932.67
|
| Charge Reference:
|
Valence band minimum
|
| Energy Scale Evalution:
|
Reliable, with two-point correction of energy scale
|
| Specimen Information:
|
| Specimen:
|
cleaved crystal, crystal, vapor deposited
|
| Method of Determining Specimen Composition:
|
|
| Method of Determining Specimen Crystallinity:
|
|
| Specimen Temperature (K):
|
300
|
| Sample Quality:
|
Adequate
|
| :
|
| Notes:
|
The p-type GaSe single crystal with a carrier concentration of 8E15 cm-3 was prepared by standard gas transport. The spectra were recorded at normal emission.
|