NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

surface state

silicon

7440-21-3

element, II-VI semiconductor, IV semiconductor

Citation:

Author Name(s):

Safta N., Lacharme J.P., Cricenti A., Taleb-Ibrahimi A., Indlekofer G., Aristov V., et al.

Journal:

Nucl. Instruments Methods in Phys. Res. Sec. B 97, 372

DOI:

Pub Year:

1995

book All Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift for the Fourth Layer of Atoms

Line Designation:

SS4-2p_3/2

Binding Energy (eV)

-0.40

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.45

Lorentzian Width (eV):

0.035

Measurement:

Use of X-ray Monochromator:

Anode Material:

other source

X-ray Energy:

151

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Si(110)-(2x8). The sample was cleaned by annealing at ~ 1173 K. FAT mode. Emission angle = 55 degrees. Branching ratio = 0.50.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300