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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
surface state
silicon
element, II-VI semiconductor, IV semiconductor

Citation:
Safta N., Lacharme J.P., Cricenti A., Taleb-Ibrahimi A., Indlekofer G., Aristov V., et al.
Nucl. Instruments Methods in Phys. Res. Sec. B 97, 372
Pub Year:
1995

Data Processing:
Surface Core-level Shift for the Fourth Layer of Atoms
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
151
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Si(110)-(2x8). The sample was cleaned by annealing at ~ 1173 K. FAT mode. Emission angle = 55 degrees. Branching ratio = 0.50.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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