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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ga
Formula:
GaAs
Name:
gallium(III) arsenide
CAS Registry No:
1303-00-0
Class:
arsenide, II-VI semiconductor, III-V semiconductor

Citation:
Author Name(s):
Stietz F., Sloboshanin S., Engelhard H., Allinger T., Goldmann A., and Schaefer J.A.
Journal:
Solid State Commun. 94, 643
DOI:
Pub Year:
1995

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
3d5/2
Binding Energy (eV)
19.80
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
0.310

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
other source
X-ray Energy:
70
Overall Energy Resolution (eV):
0.3
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-GaAs(100)c(8x2) with a carrier concentration of 1E18 cm-3. The spectra were recorded at normal emission. The sample was cleaned by Ne+ ion bombardment Ep = 500 eV, j = 1microampere cm-2) and annealing (T = 900 K). Branching ratio = 0.67.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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