NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

InP

indium phosphide

22398-80-7

II-VI semiconductor, III-V semiconductor, phosphide

Citation:

Author Name(s):

Chasse T., Nowak C., Rennert P., Braun W., Richter W., and Zahn D.R.T.

Journal:

Surf. Sci. 331, 389

DOI:

Pub Year:

1995

bookAll Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift

Line Designation:

SS-4d

Surface Core-Level Shift (eV)

0.31

Energy Uncertainty:

0.02

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.78

Lorentzian Width (eV):

0.26

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

40 - 90

Overall Energy Resolution (eV):

0.2

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

InP(100).

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300