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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
In
Formula:
InP
XPS Formula:
bulk component
Name:
indium phosphide
CAS Registry No:
22398-80-7
Class:
II-VI semiconductor, III-V semiconductor, phosphide

Citation:
Author Name(s):
Ottaviani C., Capozi M., Quaresima C., Matteucci M., Crotti C., Perfetti P., et al.
Journal:
J. Electron Spectrosc. Relat. Phenom. 76, 139
DOI:
Pub Year:
1995

Data Processing:
Data Type:
Surface Core-level Shift
Line Designation:
SS-4d
Surface Core-Level Shift (eV)
0.00
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
0.21

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
65
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type and p-type InP(110) with carrier concentrations of 1E15 and 2.9E17 cm-3, respectively. The spectra were recorded at normal emission and 51 degrees. Branching ratio = 0.60.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
90
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