NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

H₂S/InP

Name:

dihydrogen sulfide/indium(III) phosphide

CAS Registry No:

Class:

II-VI semiconductor, III-V semiconductor, phosphide

Citation:

Author Name(s):

Dudzik E., Muller C., McGovern I.T., Lloyd D.R., Patchett A, Zahn D.R.T. et al

Journal:

Surf. Sci. 344, 1

DOI:

Pub Year:

1995

bookAll Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift

Line Designation:

SS-4d

Surface Core-Level Shift (eV)

-0.28

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.41

Lorentzian Width (eV):

0.20

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

160

Overall Energy Resolution (eV):

0.5

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

1L H2S/n-InP(110). Branching ratio = 0.67.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300