NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

H₂S/GaAs

Name:

dihydrogen sulfide/gallium(III) arsenide

CAS Registry No:

Class:

arsenide, II-VI semiconductor, III-V semiconductor

Citation:

Author Name(s):

Dudzik E., Muller C., McGovern I.T., Lloyd D.R., Patchett A, Zahn D.R.T. et al

Journal:

Surf. Sci. 344, 1

DOI:

Pub Year:

1995

bookAll Records in this Publication

Data Processing:

Data Type:

Doublet Separation for Photoelectron Lines

Line Designation:

DS-3d

Double Separation (eV)

0.69

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.25

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

6 L H2S were adsorbed onto GaAs(110) at 200 K. Branching ratio = 0.64.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

200