NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

InAs

indium(III) arsenide

1303-11-3

arsenide, II-VI semiconductor, III-V semiconductor

Citation:

Author Name(s):

Nowak C., Krujatz J., Markl A., Meyne C., Chasse A., Braun W., et al.

Journal:

Surf. Sci. 331, 619

DOI:

Pub Year:

1995

bookAll Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift

Line Designation:

SS-4d_5/2

Surface Core-Level Shift (eV)

0.26

Energy Uncertainty:

0.01

Background Subtraction Method:

other

Peak Location Method:

Gaussian

Full Width at Half-maximum Intensity (eV):

0.43

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.20

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type InAs(110) with a carrier concentration of 1.1E17 cm-3. Branching ratio =

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300