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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
indium(III) arsenide
arsenide, II-VI semiconductor, III-V semiconductor

Citation:
Nowak C., Krujatz J., Markl A., Meyne C., Chasse A., Braun W., et al.
Surf. Sci. 331, 619
Pub Year:
1995

Data Processing:
Doublet Separation for Photoelectron Lines

Measurement:
Anode Material:
other source
X-ray Energy:
55
Overall Energy Resolution (eV):
0.20
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type InAs(110) with a carrier concentration of 1.1E17 cm-3. Branching ratio =

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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