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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Si
Name:
silicon
CAS Registry No:
7440-21-3
Class:
element, II-VI semiconductor, IV semiconductor

Citation:
Author Name(s):
Cricenti A., Le Lay G., Aristov V.Y., Nesterenko B., Safta N., Lacharme J.P., et al.
Journal:
J. Electron Spectrosc. Relat. Phenom. 76, 613
DOI:
Pub Year:
1995

Data Processing:
Data Type:
Surface Core-level Shift
Line Designation:
SS-2p3/2
Surface Core-Level Shift (eV)
-0.89
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.45
Lorentzian Width (eV):
0.035

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
151
Overall Energy Resolution (eV):
0.08
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-Si(110)-(16x2) with a carrier concentration of 1E14 cm-3. The sample was outgassed at 773 K and cleaned by heating with direct current (T = 1273 - 1473 K, time = 10 min). Peak locations: Voigt function. Branching ratio = 0.5 The spectra were recorded at normal emission and 55 degrees.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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