NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

As

GaAs

gallium(III) arsenide

CAS Registry No:

1303-00-0

arsenide, II-VI semiconductor, III-V semiconductor

Citation:

Author Name(s):

Ibrahim K., Liu F.Q., Jia J.F., Dong Y.H., Yang Y., Qian H.J. et al.

J. Electron Spectrosc. Relat. Phenom. 78, 437

Pub Year:

1996

bookAll Records in this Publication

Data Processing:

Photoelectron Line

Line Designation:

3d

Binding Energy (eV)

41.34

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

GaAs(100). GaAs(100) and GaAs(110). The samples were decapped by heating at 623 K followed by annealing cycles at temperatures up to 843 K. Branching ratio = 0.67.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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