NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

GaAs

Name:

gallium(III) arsenide

CAS Registry No:

1303-00-0

Class:

arsenide, II-VI semiconductor, III-V semiconductor

Citation:

Author Name(s):

Poirier D.M., Weaver J.H.

Journal:

Surf. Sci. Spectra 2, 201

DOI:

Pub Year:

1993

bookAll Records in this Publication

Data Processing:

Data Type:

Doublet Separation for Photoelectron Lines

Line Designation:

DS-3d

Double Separation (eV)

0.46

Energy Uncertainty:

Background Subtraction Method:

Shirley

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Cu = 84.00,932.67

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with two-point correction of energy scale

Comment:

n-type Si-doped GaAs(110) with a carrier concentration of 1E17 cm-3. The composition determined by XPS was Ga0.55As0.45.

Specimen:

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

295