Tab Page Summary
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor
Dhanak V.R., Goldoni A., Sancrotti M., Modesti S., Santoni A.
J. Electron Spectrosc. Relat. Phenom. 80, 45
10.1016/0368-2048(96)02919-2
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mixed Gaussian/Lorentzian
Anode Material:
other source
Overall Energy Resolution (eV):
0.27
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type Sb-doped Ge(111)c(2x8) with a resistivity of 0.1 ohm cm. The sample was cleaned by cycles of Ar+ ion bombardment and annealing (T = 1100 K). Branching ratio = 0.625.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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