NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

GaAs

Name:

gallium(III) arsenide

CAS Registry No:

1303-00-0

Class:

arsenide, II-VI semiconductor, III-V semiconductor

Citation:

Author Name(s):

Olsson L.O., Bjorkqvist M., Kanski J., Ilver L., Nilsson P.O.

Journal:

Surf. Sci. 366, 121

DOI:

Pub Year:

1996

bookAll Records in this Publication

Data Processing:

Data Type:

Doublet Separation for Photoelectron Lines

Line Designation:

DS-3d

Double Separation (eV)

0.45

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

other source

X-ray Energy:

100

Overall Energy Resolution (eV):

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

GaAs(311)-(1x1). The sample was cleaned by cycles of Ar+ ion bombardment (Ep = 500 eV) and annealing (T = 550 K). Branching ratio = 0.66.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300