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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
In
Formula:
InP
Name:
indium phosphide
CAS Registry No:
22398-80-7
Class:
II-VI semiconductor, III-V semiconductor, phosphide

Citation:
Author Name(s):
Sloboshanin S., Engelhard H., Stietz F., Schaefer J.A., Goldmann A.
Journal:
Surf. Sci. 369, 209
DOI:
Pub Year:
1996

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
4d5/2
Binding Energy (eV)
17.50
Energy Uncertainty:
0.1
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
other source
X-ray Energy:
40.8
Overall Energy Resolution (eV):
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type S-doped and p-type Cd-doped InP(100)-(4x2) wafers with a carrier concentration of 1E18 cm-3. The surface was cleaned by hydrofluoric acid ad subsequent cycles of Ne+ ion bombardment (Ep = 550 eV, j = 0.7 microampere cm-2) and annealing (T = 650 K, time = 5 min).The spectra were recorded at normal emission.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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