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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
O2/Si
Si(III) state
silicon oxides (O2/Si)
11126-22-0
IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Scholz S.M., Jacobi K.
Surf. Sci. 369, 117
Pub Year:
1996

Data Processing:
Chemical Shift
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
135
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
100 L O2/Si(113)-(3x1). FAT mode. The spectra were recorded at normal emission and 40 degrees. Branching ratio = 0.52.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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