NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

GaAs

Name:

gallium(III) arsenide

CAS Registry No:

1303-00-0

Class:

arsenide, II-VI semiconductor, III-V semiconductor

Citation:

Author Name(s):

Ettedgui E., Park K.T., Cao J., Gao Y., Ruckman M.W.

Journal:

J. Appl. Phys. 77, 5411

DOI:

Pub Year:

1995

bookAll Records in this Publication

Data Processing:

Photoelectron Line

3d_5/2

40.30

Background Subtraction Method:

other

Peak Location Method:

Gaussian

Full Width at Half-maximum Intensity (eV):

1.08

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type GaAs(100) with a carrier concentration of 2E18 cm-3. Branching ratio = 0.67.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):