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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
GaAs
Name:
gallium(III) arsenide
CAS Registry No:
1303-00-0
Class:
arsenide, II-VI semiconductor, III-V semiconductor

Citation:
Author Name(s):
Ettedgui E., Park K.T., Cao J., Gao Y., Ruckman M.W.
Journal:
J. Appl. Phys. 77, 5411
DOI:
Pub Year:
1995

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-3d
Double Separation (eV)
0.70
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
Gaussian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
other source
X-ray Energy:
85
Overall Energy Resolution (eV):
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type GaAs(100) with a carrier concentration of 2E18 cm-3. Branching ratio = 0.67.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
90
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