NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

SiC

silicon carbide

409-21-2

carbide, II-VI semiconductor, IV semiconductor, IV-VI semiconductor, silicide

Citation:

Author Name(s):

Chorasia A.R., Hood S.J., Chopra D.R.

Journal:

J. Vac. Sci. Technol. A 14, 699

DOI:

Pub Year:

1996

bookAll Records in this Publication

Data Processing:

Chemical Shift

CS-AP-1s,KL23L23(1D)

0.20

0.2

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

other anode

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Ag,Cu = 84.00,368.27,932.67

Charge Reference:

Element

Energy Scale Evaluation:

Reliable, with two-point correction of energy scale

Comment:

The sample was cleaned by Ar+ ion bombardment (Ep = 3 keV, j = 4 microamperes cm-2, time = 5 min). FAT mode. Hexagonal structure.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300